Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

URN to cite this document:: urn:nbn:de:bvb:355-epub-216173
DOI to cite this document:: 10.5283/epub.21617

Jönen, H. ; Rossow, U. ; Bremers, H. ; Hoffmann, L. ; Brendel, M. ; Dräger, A. D. ; Schwaiger, S. ; Scholz, F. ; Thalmair, Johannes ; Zweck, Josef ; Hangleiter, A.

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Date of publication of this fulltext: 25 Jul 2011 09:29

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Abstract

We report on the optical properties of m-plane GaInN/GaN quantum wells (QWs). We found that the emission energy of GaInN QWs grown on m-plane SiC is significantly lower than on non-polar bulk GaN, which we attribute to the high density of stacking faults. Temperature and power dependent photoluminescence reveals that the GaInN QWs on SiC have almost as large internal quantum efficiencies as on ...