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Theoretical study of interacting hole gas in p-doped bulk III-V semiconductors

URN to cite this document:
urn:nbn:de:bvb:355-epub-242948
Schliemann, John
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Date of publication of this fulltext: 11 May 2012 09:38


Abstract

We study the homogeneous interacting hole gas in p-doped bulk III-V semiconductors. The structure of the valence band is modeled by Luttinger’s Hamiltonian in the spherical approximation, giving rise to heavy and light hole dispersion branches, and the Coulomb repulsion is taken into account via a self-consistent Hartree-Fock treatment. As a nontrivial feature of the model, the self-consistent ...

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