Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC

URN to cite this document:: urn:nbn:de:bvb:355-epub-26074
DOI to cite this document:: 10.5283/epub.2607

Schwarz, Uli

; Schuck, P. ; Mason, M. ; Grober, R. ; Roskowsky, A. ; Einfeldt, S. ; Davis, R.

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Date of publication of this fulltext: 05 Aug 2009 13:40

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Abstract

Mapping of the strain distribution in uncoalesced pendeoepitaxial GaN on SiC by spatially resolved micro-Raman and microphotoluminescence, and lattice constants measured by high-resolution x-ray diffraction provide a consistent picture of relaxation of inhomogeneous and anisotropic strain. The pendeoepitaxial wings show a nearly complete strain relaxation and high optical quality with extremely ...