Gate-controlled persistent spin helix state in (In,Ga)As quantum wells

URN to cite this document:: urn:nbn:de:bvb:355-epub-268016
DOI to cite this document:: 10.5283/epub.26801

Kohda, M. ; Lechner, Vera ; Kunihashi, Y. ; Dollinger, Tobias ; Olbrich, Peter ; Schönhuber, Christoph ; Caspers, Ines ; Belkov, Vassilij ; Golub, Leonid ; Weiss, Dieter ; Richter, Klaus ; Nitta, J. ; Ganichev, Sergey

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Date of publication of this fulltext: 22 Nov 2012 10:08

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Abstract

In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, α and β, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free ...