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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-291593
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.29159
Zusammenfassung
In scanning tunneling experiments on semiconductor surfaces, the energy scale within the tunneling junction is usually unknown due to tip-induced band bending. Here, we experimentally recover the zero point of the energy scale by combining scanning tunneling microscopy with Kelvin probe force spectroscopy. With this technique, we revisit shallow acceptors buried in GaAs. Enhanced acceptor-related ...
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