Fixing the Energy Scale in Scanning Tunneling Microscopy on Semiconductor Surfaces

URN to cite this document:: urn:nbn:de:bvb:355-epub-291593
DOI to cite this document:: 10.5283/epub.29159

Münnich, Gerhard ; Donarini, Andrea ; Wenderoth, Martin ; Repp, Jascha

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Date of publication of this fulltext: 04 Dec 2013 11:17

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Abstract

In scanning tunneling experiments on semiconductor surfaces, the energy scale within the tunneling junction is usually unknown due to tip-induced band bending. Here, we experimentally recover the zero point of the energy scale by combining scanning tunneling microscopy with Kelvin probe force spectroscopy. With this technique, we revisit shallow acceptors buried in GaAs. Enhanced acceptor-related ...