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Fixing the Energy Scale in Scanning Tunneling Microscopy on Semiconductor Surfaces

Münnich, Gerhard, Donarini, Andrea, Wenderoth, Martin and Repp, Jascha (2013) Fixing the Energy Scale in Scanning Tunneling Microscopy on Semiconductor Surfaces. Physical Review Letters 111, p. 216802.

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Date of publication of this fulltext: 04 Dec 2013 11:17

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Other URL: http://link.aps.org/doi/10.1103/PhysRevLett.111.216802


Abstract

In scanning tunneling experiments on semiconductor surfaces, the energy scale within the tunneling junction is usually unknown due to tip-induced band bending. Here, we experimentally recover the zero point of the energy scale by combining scanning tunneling microscopy with Kelvin probe force spectroscopy. With this technique, we revisit shallow acceptors buried in GaAs. Enhanced acceptor-related ...

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Item type:Article
Date:19 November 2013
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group Milena Grifoni
Physics > Institute of Experimental and Applied Physics > Chair Professor Giessibl > Group Jascha Repp
Projects:Volkswagen Foundation (Lichtenberg Program), SPP 1243: Quantum transport at the molecular scale, SFB 689: Spinphänomene in reduzierten Dimensionen, SPP 1285: Halbleiter Spintronik
Identification Number:
ValueType
10.1103/PhysRevLett.111.216802DOI
Classification:
NotationType
73.40.GkPACS
71.55.EqPACS
73.20.-rPACS
73.40.QvPACS
Keywords:Resonant tunneling, III-V Semiconductors, impurity and defect levels, Metal-insulator-semiconductor structures
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:29159
Owner only: item control page

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