Response of the topological surface state to surface disorder in TIBiSe2

URN to cite this document:: urn:nbn:de:bvb:355-epub-317592
DOI to cite this document:: 10.5283/epub.31759

Pielmeier, Florian ; Landolt, Gabriel ; Slomski, Bartosz ; Muff, Stefan ; Berwanger, Julian ; Eich, Andreas ; Khajetoorians, Alexander A. ; Wiebe, Jens ; Aliev, Ziya S. ; Babanly, Mahammad B. ; Wiesendanger, Roland ; Osterwalder, Jürg ; Chulkov, Evgueni V. ; Giessibl, Franz J. ; Dil, J. Hugo

Preview

License: Creative Commons: Attribution 3.0
PDF
(2MB)

Date of publication of this fulltext: 29 Apr 2015 10:08

Alternative links to fulltext:DOI Publisher

Details

Preview

Export bibliographical data

Abstract

Through a combination of experimental techniques we show that the topmost layer of the topological insulator TlBiSe2 as prepared by cleavage is formed by irregularly shaped Tl islands at cryogenic temperatures and by mobile Tl atoms at room temperature. No trivial surface states are observed in photoemission at low temperatures, which suggests that these islands cannot be regarded as a clear ...