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Ferromagnet/Semiconductor interfaces: Spin injection and Anisotropic polar magneto-optic Kerr effect

Buchner, Martin (2017) Ferromagnet/Semiconductor interfaces: Spin injection and Anisotropic polar magneto-optic Kerr effect. PhD, Universität Regensburg.

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Date of publication of this fulltext: 11 Dec 2017 09:59

Abstract (English)

In this thesis basic research in the field of semiconductor spintronics is performed. Electron spin injection from ferromagnetic contacts into GaAs-based heterostructure systems is investigated by employing scanning Kerr microscopy at the cleaved edge of the samples. The experiments suggest that spin diffusion and charge diffusion in bulk n-GaAs samples have comparable strengths. In contrast, ...


Translation of the abstract (German)

Diese Arbeit beschäftigt sich mit Grundlagenforschung auf dem Gebiet der Halbleiter-Spintronik. Elektronenspininjektion von ferromagnetischen Kontakten in GaAs-basierte Heterostruktursysteme wird mithilfe von Kerrmikroskopie an der Spaltkante der Proben untersucht. Die Experimente zeigen, dass Spindiffusion und Ladungsdiffusion in bulk n-GaAs Proben eine vergleichbare Stärke besitzen. Im ...


Export bibliographical data

Item type:Thesis of the University of Regensburg (PhD)
Date:11 December 2017
Referee:Prof. Dr. Christian H. Back
Date of exam:4 December 2017
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back
Keywords:Semiconductor spintronics, electrical spin injection, thermal spin injection, 2DEG, spin relaxation anisotropy, Hanle effect, spin-orbit coupling fields, Fe/GaAs(001), polar magneto-optic Kerr effect
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:36432
Owner only: item control page


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