Probing the Coulomb gap in the topological insulator BiSbTeSe2 via Quantum Capacitance

URN to cite this document:: urn:nbn:de:bvb:355-epub-411233
DOI to cite this document:: 10.5283/epub.41123

Wang, Jimin

; Gorini, Cosimo ; Richter, Klaus ; Wang, Zhiwei ; Ando, Yoichi ; Weiss, Dieter

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Date of publication of this fulltext: 09 Dec 2019 09:36

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Abstract

BiSbTeSe2 is a 3D topological insulator with Dirac type surface states and low bulk carrier density, as donors and acceptors compensate each other. Dominating low temperature surface transport in this material is heralded by Shubnikov-de Haas oscillations and the quantum Hall effect. Here, we experimentally probe the electronic density of states (DOS) in thin layers of BiSbTeSe2 by capacitance ...