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Two-Dimensional-Dirac Surface States and Bulk Gap Probed via Quantum Capacitance in a Three-Dimensional Topological Insulator

URN to cite this document:
urn:nbn:de:bvb:355-epub-441934
DOI to cite this document:
10.5283/epub.44193
Wang, Jimin ; Gorini, Cosimo ; Richter, Klaus ; Wang, Zhiwei ; Ando, Yoichi ; Weiss, Dieter

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Date of publication of this fulltext: 01 Dec 2020 06:43



Abstract

BiSbTeSe2 is a 3D topological insulator (3D-TI) with Dirac type surface states and low bulk carrier density, as donors and acceptors compensate each other. Dominating low-temperature surface transport in this material is heralded by Shubnikov−de Haas oscillations and the quantum Hall effect. Here, we experimentally probe and model the electronic density of states (DOS) in thin layers of BiSbTeSe2 ...

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