Diffusion of boron in germanium at 800-900 °C revisited

URN to cite this document:: urn:nbn:de:bvb:355-epub-433462
DOI to cite this document:: 10.5283/epub.43346

Kipke, F. ; Südkamp, T. ; Prüßing, J. K. ; Bougeard, Dominique

; Bracht, H.

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Date of publication of this fulltext: 18 Jun 2020 07:42

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Abstract

Diffusion of boron (B) in germanium (Ge) at temperatures ranging between 800 degrees C and 900 degrees C is revisited following the most recent results reported by Uppal et al. [J. Appl. Phys. 96, 1376 (2004)] that have been obtained mainly with implantation doped samples. In this work, we determined the intrinsic B diffusivity by employing epitaxially grown alternating undoped and B-doped Ge ...