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Anisotropy and Mechanistic Elucidation of Wet-Chemical Gallium Nitride Etching at the Atomic Level

URN to cite this document:
urn:nbn:de:bvb:355-epub-446320
DOI to cite this document:
10.5283/epub.44632
Tautz, Markus ; Weimar, Andreasa ; Graßl, Christian ; Diaz Diaz, David ;
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License: Creative Commons Attribution 4.0
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Date of publication of this fulltext: 27 Jan 2021 12:58


Abstract

Etching of gallium nitride is a key step in the production of blue and white light-emitting diodes (LEDs). Etching in aqueous KOH solution creates a rough surface on the LED chip to facilitate outcoupling of the photons generated, drastically increasing the resulting LED's efficiency. Compared with the common technique of dry etching, wet-chemical etching using aqueous KOH solution has ...

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