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Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements

Arakawa, T. ; Shiogai, J. ; Maeda, M. ; Ciorga, M. ; Utz, M. ; Schuh, D. ; Niimi, Y. ; Kohda, M. ; Nitta, J. ; Bougeard, D. ; Weiss, D. ; Kobayashi, K.


Electron transport across a tunneling barrier is governed by intricate and diverse causes such as interface conditions, material properties, and device geometries. Here, by measuring the shot noise, we investigate electron transport in a (Ga,Mn)As/GaAs-based spin Esaki diode junction over a wide range of bias voltage. The asymmetric electronic band profile across the junction allows us to tune ...


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