Semimetallic and semiconducting graphene-h\mathrmBN multilayers with parallel or reverse stacking - University of Regensburg Publication Server

URN to cite this document:: urn:nbn:de:bvb:355-epub-547588

Chen, Xi ; Zollner, Klaus

; Moulsdale, Christian ; Fal'ko, Vladimir I. ; Knothe, Angelika

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Date of publication of this fulltext: 05 Oct 2023 06:03

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Item type:	Article
Open Access Type:	Due to SHERPA/RoMEO
Journal or Publication Title:	Phys. Rev. B
Publisher:	American Physical Society
Volume:	107
Page Range:	p. 125402
Date:	6 March 2023
Institutions:	Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Klaus Richter Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Projects (Historical):	SFB 1277: Emergente relativistische Effekte in der Kondensierten Materie: Von grundlegenden Aspekten zu elektronischer Funktionalität, SPP 2244 (Project No. 443416183), Horizon 2020 Grant Agreement No. 881603
Dewey Decimal Classification:	500 Science > 530 Physics
Status:	Published
Refereed:	Yes, this version has been refereed
Created at the University of Regensburg:	Partially
Item ID:	54758

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Abstract

We theoretically investigate three-dimensional (3D) layered crystals of alternating graphene and hBN layers with different symmetries. Depending on the hopping parameters between the graphene layers, we find that these synthetic 3D materials can feature semimetallic, gapped, or Weyl semimetal phases. Using first-principles calculations to parametrize the low-energy Hamiltonians we establish the ...

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Semimetallic and semiconducting graphene-h multilayers with parallel or reverse stacking

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Semimetallic and semiconducting graphene-h $\mathrmBN$ multilayers with parallel or reverse stacking