Analysis of indium incorporation in non- and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties
Article
Jönen, H, Bremers, H, Rossow, U, Langer, T, Kruse, A, Hoffmann, L, Thalmair, J, Zweck, J, Schwaiger, S, Scholz, F and Hangleiter, A
(2012)
Analysis of indium incorporation in non- and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties.
Semiconductor Science and Technology 27 (2), 024013.
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| Item type | Article | ||||
| Journal or Publication Title | Semiconductor Science and Technology | ||||
| Publisher | IOP PUBLISHING LTD | ||||
| Place of Publication | BRISTOL | ||||
| Volume | 27 | ||||
| Number of Issue or Book Chapter | 2 | ||||
| Page Range | 024013 | ||||
| Date | 2012 | ||||
| Date of publication | 19 Dec 2024 09:43 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Chair Professor Back > Group Josef Zweck | ||||
| Identification Number |
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| Keywords | LIGHT-EMITTING-DIODES; QUANTUM-WELLS; PLANE GAN; SEMICONDUCTORS; FIELDS; POLARIZATION; LIFETIME; ALLOYS; LAYERS; INGAN; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 64087 |
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