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Wunderer, T. ; Feneberg, M. ; Lipski, F. ; Wang, J. ; Leute, R. A. R. ; Schwaiger, S. ; Thonke, K. ; Chuvilin, A. ; Kaiser, U. ; Metzner, S. ; Bertram, F. ; Christen, J. ; Beirne, G. J. ; Jetter, M. ; Michler, P. ; Schade, L. ; Vierheilig, C. ; Schwarz, U. T. ; Dräger, A. D. ; Hangleiter, A. ; Scholz, F.

Three‐dimensional GaN for semipolar light emitters

Wunderer, T., Feneberg, M. , Lipski, F., Wang, J., Leute, R. A. R., Schwaiger, S., Thonke, K., Chuvilin, A. , Kaiser, U., Metzner, S., Bertram, F. , Christen, J., Beirne, G. J., Jetter, M. , Michler, P., Schade, L., Vierheilig, C., Schwarz, U. T., Dräger, A. D., Hangleiter, A. and Scholz, F. (2011) Three‐dimensional GaN for semipolar light emitters. physica status solidi (b) 248 (3), pp. 549-560.

Date of publication of this fulltext: 19 Dec 2024 11:13
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Item typeArticle
Journal or Publication Titlephysica status solidi (b)
Publisher:WILEY-V C H VERLAG GMBH
Place of Publication:WEINHEIM
Volume:248
Number of Issue or Book Chapter:3
Page Range:pp. 549-560
Date2011
InstitutionsPhysics > Institute of Experimental and Applied Physics
Identification Number
ValueType
10.1002/pssb.201046352DOI
KeywordsCHEMICAL-VAPOR-DEPOSITION; A-PLANE GAN; EPITAXIAL LATERAL OVERGROWTH; SELECTIVE-AREA GROWTH; BULK INGAN FILMS; QUANTUM-WELLS; EMITTING-DIODES; PIEZOELECTRIC FIELDS; SIDE FACETS; NONPOLAR; InGaN; light-emitting devices; quantum wells; III-V semiconductors
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgYes
Item ID65167

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