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Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy
Hertkorn, J., Thapa, S. B., Wunderer, T., Scholz, F., Wu, Z. H., Wei, Q. Y., Ponce, F. A.
, Moram, M. A., Humphreys, C. J., Vierheilig, C. and Schwarz, U. T.
(2009)
Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy.
Journal of Applied Physics 106 (1).
Date of publication of this fulltext: 19 Dec 2024 12:05
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| Item type | Article | ||||
| Journal or Publication Title | Journal of Applied Physics | ||||
| Publisher: | AMER INST PHYSICS | ||||
|---|---|---|---|---|---|
| Place of Publication: | MELVILLE | ||||
| Volume: | 106 | ||||
| Number of Issue or Book Chapter: | 1 | ||||
| Date | 2009 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz | ||||
| Identification Number |
| ||||
| Uncontrolled Keywords | ALGAN/GAN SUPERLATTICES; GAN; HETEROSTRUCTURES; TRANSPORT; SEMICONDUCTORS; NUCLEATION; SAPPHIRE; QUALITY; LAYER; aluminium compounds; electrical conductivity; electroluminescence; electron holography; gallium compounds; Hall effect; hole density; hole mobility; III-V semiconductors; light emitting diodes; MOCVD; reflectometry; semiconductor heterojunctions; valence bands; vapour phase epitaxial growth; wide band gap semiconductors; X-ray diffraction; X-ray reflection | ||||
| Subjects | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 67069 |
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