Optically induced transport properties of freely suspended semiconductor submicron channels

Abstract

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas. The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of 1-10 ms. (c) 2008 American Institute of Physics.