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The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p+ epitaxial silicon wafers
Hölzl, R., Fabry, L. and Range, K.J. (2002) The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p+ epitaxial silicon wafers. Applied Physics A 74 (1), pp. 35-39.Date of publication of this fulltext: 19 Dec 2024 15:46
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| Item type | Article | ||||
| Journal or Publication Title | Applied Physics A | ||||
| Publisher: | SPRINGER-VERLAG | ||||
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| Place of Publication: | NEW YORK | ||||
| Volume: | 74 | ||||
| Number of Issue or Book Chapter: | 1 | ||||
| Page Range: | pp. 35-39 | ||||
| Date | 2002 | ||||
| Institutions | Chemistry and Pharmacy > Institut für Anorganische Chemie > Alumni or Retired Professors > Prof. Dr. Klaus-Jürgen Range | ||||
| Identification Number |
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| Keywords | MASS-SPECTROMETRY; COPPER; IMPURITIES; DIFFUSION; CONTAMINATION; NANOCAVITIES; SOLUBILITY; IONS; CU; NI; | ||||
| Dewey Decimal Classification | 500 Science > 540 Chemistry & allied sciences | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 73216 |
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