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Hölzl, R. ; Fabry, L. ; Range, K.J.

The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p+ epitaxial silicon wafers

Hölzl, R., Fabry, L. and Range, K.J. (2002) The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p+ epitaxial silicon wafers. Applied Physics A 74 (1), pp. 35-39.

Date of publication of this fulltext: 19 Dec 2024 15:46
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Item typeArticle
Journal or Publication TitleApplied Physics A
Publisher:SPRINGER-VERLAG
Place of Publication:NEW YORK
Volume:74
Number of Issue or Book Chapter:1
Page Range:pp. 35-39
Date2002
InstitutionsChemistry and Pharmacy > Institut für Anorganische Chemie > Alumni or Retired Professors > Prof. Dr. Klaus-Jürgen Range
Identification Number
ValueType
10.1007/s003390100866DOI
KeywordsMASS-SPECTROMETRY; COPPER; IMPURITIES; DIFFUSION; CONTAMINATION; NANOCAVITIES; SOLUBILITY; IONS; CU; NI;
Dewey Decimal Classification500 Science > 540 Chemistry & allied sciences
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgYes
Item ID73216

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