Abstract
The voltage- and time-dependence of the tunneling currents in polysilicon-oxide-nitride-oxide semiconductor structures have been investigated. Electron and hole contributions were separated using a shallow junction technique. The standard tunneling model for charge injection was successfully applied to describe the observed threshold voltage shifts. For both positive and negative gate voltages, ...
Abstract
The voltage- and time-dependence of the tunneling currents in polysilicon-oxide-nitride-oxide semiconductor structures have been investigated. Electron and hole contributions were separated using a shallow junction technique. The standard tunneling model for charge injection was successfully applied to describe the observed threshold voltage shifts. For both positive and negative gate voltages, the time-dependence of the current density through the tunneling oxide is given by a simple analytical equation. This equation is characterized by an initial time constant and an asymptotic t(-1)-dependence. At large programming times the current density follows the t(-1)-dependence, independent of the tunneling oxide thickness and applied voltage. Under positive polarity (write) electrons are injected from the substrate. Under negative polarity (erase) and previous injection electron back-tunneling rather than hole injection is dominant at the beginning of erasing. At the end of erasing, steady-state conduction can be dominated either by electrons or holes, depending on the applied voltage. (C) 2001 American Institute of Physics.
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