Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substrates
Article
As, D. J., Frey, T., Schikora, D., Lischka, K., Cimalla, V., Pezoldt, J., Goldhahn, R.
, Kaiser, S. and Gebhardt, W.
(2000)
Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substrates.
Applied Physics Letters 76 (13), pp. 1686-1688.
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| Item type | Article | ||||
| Journal or Publication Title | Applied Physics Letters | ||||
| Publisher | AMER INST PHYSICS | ||||
| Place of Publication | MELVILLE | ||||
| Volume | 76 | ||||
| Number of Issue or Book Chapter | 13 | ||||
| Page Range | pp. 1686-1688 | ||||
| Date | 2000 | ||||
| Date of publication | 19 Dec 2024 15:59 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics | ||||
| Identification Number |
| ||||
| Keywords | LAYERS; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 74369 |
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