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Hutin, L. ; Lundberg, T. ; Chatterjee, A. ; Crippa, A. ; Li, J. ; Maurand, R. ; Jehl, X. ; Sanquer, M. ; Gonzalez-Zalba, M. F. ; Kuemmeth, Ferdinand 
; Niquet, Y.-M. ; Bertrand, B. ; De Franceschi, S. ; Urdampilleta, M. ; Meunier, T. ; Vinet, M. ; Chanrion, E. ; Bohuslavskyi, H. ; Ansaloni, F. ; Yang, T.-Y. ; Michniewicz, J. ; Niegemann, D. J. ; Spence, C.
; Niquet, Y.-M. ; Bertrand, B. ; De Franceschi, S. ; Urdampilleta, M. ; Meunier, T. ; Vinet, M. ; Chanrion, E. ; Bohuslavskyi, H. ; Ansaloni, F. ; Yang, T.-Y. ; Michniewicz, J. ; Niegemann, D. J. ; Spence, C. Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
Hutin, L., Lundberg, T., Chatterjee, A., Crippa, A., Li, J., Maurand, R., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F., Kuemmeth, Ferdinand, Niquet, Y.-M., Bertrand, B., De Franceschi, S., Urdampilleta, M., Meunier, T., Vinet, M., Chanrion, E., Bohuslavskyi, H., Ansaloni, F., Yang, T.-Y., Michniewicz, J., Niegemann, D. J. und Spence, C.
(2019)
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays.
In: 2019 IEEE International Electron Devices Meeting (IEDM), 7-11 Dec. 2019, San Francisco.
Veröffentlichungsdatum dieses Volltextes: 09 Apr 2026 08:47
Konferenz- oder Workshop-Beitrag
DOI zum Zitieren dieses Dokuments: 10.5283/epub.79182
Zusammenfassung
We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent ...
We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.
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| Dokumentenart | Konferenz- oder Workshop-Beitrag (Paper) | ||||||
| Buchtitel: | 2019 IEEE International Electron Devices Meeting (IEDM) | ||||||
|---|---|---|---|---|---|---|---|
| Seitenbereich: | 37.7.1-37.7.4 | ||||||
| Datum | 2019 | ||||||
| Institutionen | Physik > Institut für Experimentelle und Angewandte Physik | ||||||
| Identifikationsnummer |
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| Stichwörter / Keywords | State Of Charge, Linear Array, Spin State, Electrometer, Charge Movement, Readout Scheme, Impedance, Magnetic Field, Number Of Charges, Charge Transition, Stability Diagram | ||||||
| Dewey-Dezimal-Klassifikation | 500 Naturwissenschaften und Mathematik > 530 Physik | ||||||
| Status | Veröffentlicht | ||||||
| Begutachtet | Nein, diese Version wurde noch nicht begutachtet (bei preprints) | ||||||
| An der Universität Regensburg entstanden | Nein | ||||||
| URN der UB Regensburg | urn:nbn:de:bvb:355-epub-791823 | ||||||
| Dokumenten-ID | 79182 |
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