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Nguyen, H. Q. ; Sabonis, D. ; Razmadze, D. ; Mannila, E. T. ; Maisi, V. F. ; van Zanten, D. M. T. ; O'Farrell, E. C. T. ; Krogstrup, P. ; Kuemmeth, Ferdinand ; Pekola, J. P. ; Marcus, C. M.

Electrostatic control of quasiparticle poisoning in a hybrid semiconductor-superconductor island

Nguyen, H. Q., Sabonis, D., Razmadze, D., Mannila, E. T., Maisi, V. F., van Zanten, D. M. T., O'Farrell, E. C. T., Krogstrup, P., Kuemmeth, Ferdinand , Pekola, J. P. and Marcus, C. M. (2023) Electrostatic control of quasiparticle poisoning in a hybrid semiconductor-superconductor island. Physical Review B 108, L041302.

Date of publication of this fulltext: 09 Apr 2026 12:18
Article
DOI to cite this document: 10.5283/epub.79196


Abstract

The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate the electrostatic control of quasiparticle poisoning in the form of single-charge tunneling across a fixed barrier onto a Coulomb island in an InAs/Al hybrid nanowire. High-bandwidth charge sensing was used to monitor the ...

The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate the electrostatic control of quasiparticle poisoning in the form of single-charge tunneling across a fixed barrier onto a Coulomb island in an InAs/Al hybrid nanowire. High-bandwidth charge sensing was used to monitor the charge occupancy of the island across Coulomb blockade peaks, where tunneling rates were maximal, and Coulomb valleys, where tunneling was absent. Electrostatic gates changed the on-peak tunneling rates by two orders of magnitude for a barrier with fixed normal-state resistance, which we attribute to the gate dependence of the size and softness of the induced superconducting gap on the island, corroborated by separate density-of-states measurements. Temperature and magnetic field dependence of tunneling rates are also investigated.



Involved Institutions


Details

Item typeArticle
Journal or Publication TitlePhysical Review B
Publisher:American Physical Society (APS)
Volume:108
Page Range:L041302
Date18 July 2023
InstitutionsPhysics > Institute of Experimental and Applied Physics
Identification Number
ValueType
10.1103/PhysRevB.108.L041302DOI
2202.05970arXiv ID
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgNo
URN of the UB Regensburgurn:nbn:de:bvb:355-epub-791968
Item ID79196

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