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Untersuchungen zur metallorganischen Gasphasenepitaxie von Gruppe III Nitriden auf Silizium (111)

URN to cite this document: urn:nbn:de:bvb:355-opus-4534

Able, Andreas (2005) Untersuchungen zur metallorganischen Gasphasenepitaxie von Gruppe III Nitriden auf Silizium (111). PhD, Universität Regensburg.

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Abstract (German)

Ziel der vorliegenden Arbeit war es, einen geeigneten Epitaxieprozess für die Abscheidung einkristalliner Gruppe III-Nitrid Schichten auf Silizium zu entwickeln. Als Methode wurde dazu die metallorganische Gasphasenepitaxie (MOVPE) verwendet. In Kapitel 1-3 werden zunächst die wichtigsten Fakten zu den Gruppe-III Nitriden zusammengefasst, die experimentellen Charakterisierungsmethoden erläutert, ...


Translation of the abstract (English)

In the last few years the attention on silicon as a potential substrate for nitride heterostructures has grown because of its low price, high quality, and availability in a wide range of doping levels. Furthermore, there might be the possibility of combining conventional Si based structures with group III-nitride films on a single wafer. Although the crystal structure of silicon is ...


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Item type:Thesis of the University of Regensburg (PhD)
Date:30 January 2005
Referee:Werner (Prof. Dr.) Wegscheider
Date of exam:9 November 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Keywords:Wide-gap-Halbleiter , Nitride , gruppe III Nitride , widegap semiconductors , nitrides , group III nitrides
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited on:27 Oct 2009 06:57
Last modified:13 Mar 2014 11:27
Item ID:10283
Owner only: item control page


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