Ouardi, Siham and Fecher, Gerhard H. and Balke, Benjamin and Kozina, Xenia and Stryganyuk, Gregory and Felser, Claudia and Lowitzer, Stephan and Koedderitzsch, Diemo and Ebert, Hubert and Ikenaga, Eiji
Electronic transport properties of electron- and hole-doped semiconducting C1b Heusler compounds: NiTi1−xMxSn (M=Sc, V).
Physical Review B (PRB) 82, 085108.
at publisher (via DOI)
Other URL: http://link.aps.org/doi/10.1103/PhysRevB.82.085108
The substitutional series of Heusler compounds NiTi1−xMxSn (where M=Sc,V and 0<x≤0.2) were synthesized and investigated with respect to their electronic structure and transport properties. The results show the possibility to create n-type and p-type thermoelectrics within one Heusler compound. The electronic structure and transport properties were calculated by all-electron ab initio methods and ...
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|Date:||11 August 2010|
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|31.15.A-, 71.23.-k, 72.15.Jf ||PACS|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||No|
|Deposited on:||21 Feb 2011 07:58|
|Last modified:||13 Mar 2014 16:54|