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Electronic transport properties of electron- and hole-doped semiconducting C1b Heusler compounds: NiTi1−xMxSn (M=Sc, V)

Ouardi, Siham and Fecher, Gerhard H. and Balke, Benjamin and Kozina, Xenia and Stryganyuk, Gregory and Felser, Claudia and Lowitzer, Stephan and Koedderitzsch, Diemo and Ebert, Hubert and Ikenaga, Eiji (2010) Electronic transport properties of electron- and hole-doped semiconducting C1b Heusler compounds: NiTi1−xMxSn (M=Sc, V). Physical Review B (PRB) 82, 085108.

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Other URL: http://link.aps.org/doi/10.1103/PhysRevB.82.085108


Abstract

The substitutional series of Heusler compounds NiTi1−xMxSn (where M=Sc,V and 0<x≤0.2) were synthesized and investigated with respect to their electronic structure and transport properties. The results show the possibility to create n-type and p-type thermoelectrics within one Heusler compound. The electronic structure and transport properties were calculated by all-electron ab initio methods and ...

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Item Type:Article
Date:11 August 2010
Institutions:UNSPECIFIED
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1103/PhysRevB.82.085108DOI
Classification:
NotationType
31.15.A-, 71.23.-k, 72.15.Jf PACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:No
Owner: Claudia Rahm
Deposited On:21 Feb 2011 07:58
Last Modified:13 Mar 2014 16:54
Item ID:19678
Owner Only: item control page
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