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Magnitude and sign control of lithography-induced uniaxial anisotropy in ultra-thin (Ga,Mn)As wires

Shiogai, Junichi and Schuh, Dieter and Wegscheider, Werner and Kohda, M. and Nitta, J. and Weiss, Dieter (2011) Magnitude and sign control of lithography-induced uniaxial anisotropy in ultra-thin (Ga,Mn)As wires. Applied Physics Letters 98, p. 83101.

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Other URL: http://link.aip.org/link/doi/10.1063/1.3556556


Abstract

We were able to control the magnitude and sign of the uniaxial anisotropy in 5-nm-thin (Ga,Mn)As wires by changing the crystallographic direction of the lithography-induced strain relaxation. The 1-μm-wide (Ga,Mn)As wires, oriented in [110] and [1math0] directions, were fabricated using electron beam lithography. Their magnetic anisotropies were studied by a coherent rotation method at ...

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Item Type:Article
Date:22 February 2011
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber
Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1063/1.3556556 DOI
Classification:
NotationType
75.30.GwPACS
75.50.PpPACS
81.05.EaPACS
Keywords:electron beam lithography, ferromagnetic materials, gallium arsenide, III-V semiconductors, magnetic anisotropy, magnetic semiconductors, manganese compounds, wires
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Claudia Rahm
Deposited On:24 Feb 2011 14:26
Last Modified:13 Mar 2014 16:56
Item ID:19890
Owner Only: item control page
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