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Nonlinear Electron Transport in an Asymmetric Microjunction: A Ballistic Rectifier

DOI to cite this document:
Song, A. M. ; Lorke, A. ; Kriele, A. ; Kotthaus, J. P. ; Wegscheider, Werner ; Bichler, Max
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Date of publication of this fulltext: 09 Nov 2009 13:13


An asymmetric artificial scatterer in a semiconductor microjunction is shown to dramatically affect the nonlinear transport of ballistic electrons. The chosen device geometry, defined in a GaAs-AlGaAs heterostructure, successfully guides carriers in a predetermined spatial direction, independent of the direction of the input current I. From the nonlinear current-voltage characteristic we obtain ...


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