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Zimmermann, S. ; Wixforth, A. ; Kotthaus, J. P. ; Wegscheider, Werner ; Bichler, Max

A Semiconductor-Based Photonic Memory Cell

Zimmermann, S., Wixforth, A., Kotthaus, J. P., Wegscheider, Werner and Bichler, Max (1999) A Semiconductor-Based Photonic Memory Cell. Science 283 (5406), pp. 1292-1295.

Date of publication of this fulltext: 09 Nov 2009 13:28
Article
DOI to cite this document: 10.5283/epub.10890


Abstract

Photonic signals were efficiently stored in a semiconductor-based memory cell. The incident photons were converted to electron-hole pairs that were locally stored in a quantum well that was laterally modulated by a field-effect tunable electrostatic superlattice. At large superlattice potential amplitudes, these pairs were stored for a time that was at least five orders of magnitude longer than ...

Photonic signals were efficiently stored in a semiconductor-based memory cell. The incident photons were converted to electron-hole pairs that were locally stored in a quantum well that was laterally modulated by a field-effect tunable electrostatic superlattice. At large superlattice potential amplitudes, these pairs were stored for a time that was at least five orders of magnitude longer than their natural lifetime. At an arbitrarily chosen time, they were released in a short and intense flash of incoherent light, which was triggered by flattening the superlattice amplitude.



Involved Institutions


Details

Item typeArticle
Journal or Publication TitleScience
Publisher:American Institute of Physics
Volume:283
Number of Issue or Book Chapter:5406
Page Range:pp. 1292-1295
Date26 February 1999
InstitutionsPhysics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number
ValueType
10.1126/science.283.5406.1292DOI
Related URLs
URLURL Type
http://link.aip.org/link/?APPLAB/74/2179/1Publisher
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedUnknown
Created at the University of RegensburgUnknown
Item ID10890

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