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Fabricating tunable semiconductor devices with an atomic force microscope

DOI to cite this document:
Held, R. ; Lüscher, S. ; Heinzel, Thomas ; Ensslin, K. ; Wegscheider, Werner
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Date of publication of this fulltext: 30 Nov 2009 13:06


We fabricated quantum wires of different geometries in Ga[Al]As heterostructures by local oxidation of the semiconductor surface with an atomic force microscope. By magnetotransport measurements at low temperatures on these wires the electronic width is determined and compared to the geometrical width. An extremely small lateral depletion length of the order of 15 nm and a high specularity of the ...


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