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Influence of short-range ordering on roughness of (AlGa)As interfaces studied with cross-sectional scanning tunneling microscopy

DOI to cite this document:
Reusch, T. C. G. ; Wenderoth, M. ; Heinrich, A. J. ; Engel, K. J. ; Quaas, N. ; Sauthoff, K. ; Ulbrich, R. G. ; Weber, E. R. ; Uchida, K. ; Wegscheider, Werner
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Date of publication of this fulltext: 30 Nov 2009 13:28


Cross-sectional scanning tunneling microscopy was used to identify individual Al atoms on cleaved surfaces of two sets of (AlGa)As heterostructure samples grown with metalorganic vapor-phase epitaxy and molecular-beam epitaxy. We determined the average Al concentration profile perpendicular to the GaAs–(AlGa)As interfaces. Based on former investigations of short-range ordering in (AlGa)As bulk ...


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