Nonlinear optical response of highly energetic excitons in GaAs: Microscopic electrodynamics at semiconductor interfaces

DOI to cite this document:: 10.5283/epub.11195

Betz, M. ; Göger, G. ; Leitenstorfer, A. ; Bichler, Max ; Wegscheider, Werner ; Abstreiter, Gerhard

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Date of publication of this fulltext: 30 Nov 2009 14:13

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Abstract

A spectroscopic investigation of bound electron-hole pairs in GaAs propagating with large center-of-mass momentum is presented. The approach is based on transmission experiments exploiting the coupling of excitonic polarization to the electromagnetic field of femtosecond laser pulses. The dispersion relations of the coherent excitations are determined up to excess energies of 300 meV above the ...