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Betz, M. ; Göger, G. ; Leitenstorfer, A. ; Bichler, Max ; Wegscheider, Werner ; Abstreiter, Gerhard

Nonlinear optical response of highly energetic excitons in GaAs: Microscopic electrodynamics at semiconductor interfaces

Betz, M., Göger, G., Leitenstorfer, A., Bichler, Max, Wegscheider, Werner und Abstreiter, Gerhard (2002) Nonlinear optical response of highly energetic excitons in GaAs: Microscopic electrodynamics at semiconductor interfaces. Physical Review B 65 (8), 085314.

Veröffentlichungsdatum dieses Volltextes: 30 Nov 2009 14:13
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.11195


Zusammenfassung

A spectroscopic investigation of bound electron-hole pairs in GaAs propagating with large center-of-mass momentum is presented. The approach is based on transmission experiments exploiting the coupling of excitonic polarization to the electromagnetic field of femtosecond laser pulses. The dispersion relations of the coherent excitations are determined up to excess energies of 300 meV above the ...

A spectroscopic investigation of bound electron-hole pairs in GaAs propagating with large center-of-mass momentum is presented. The approach is based on transmission experiments exploiting the coupling of excitonic polarization to the electromagnetic field of femtosecond laser pulses. The dispersion relations of the coherent excitations are determined up to excess energies of 300 meV above the band edge. A surprisingly low Frohlich coupling of light-hole excitons is observed in excellent agreement with theoretical simulations. The influence of different phonon scattering processes on the excitonic damping is discussed. The interaction dynamics of excitonic wave packets with nonthermal carrier distributions is analyzed with femtosecond time resolution. A theoretical model based on the exciton-polariton concept including additional boundary conditions reproduces our experimental results. The observations. in extremely thin samples show deviations from our phenomenological model, This finding is important for a detailed understanding of the microscopic polarizability near semiconductor surfaces.



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Details

DokumentenartArtikel
Titel eines Journals oder einer ZeitschriftPhysical Review B
Verlag:AMER PHYSICAL SOC
Ort der Veröffentlichung:COLLEGE PK
Band:65
Nummer des Zeitschriftenheftes oder des Kapitels:8
Seitenbereich:085314
Datum6 Februar 2002
InstitutionenPhysik > Institut für Experimentelle und Angewandte Physik > Entpflichtete oder im Ruhestand befindliche Professoren > Arbeitsgruppe Werner Wegscheider
Identifikationsnummer
WertTyp
10.1103/PhysRevB.65.085314DOI
Verwandte URLs
URLURL Typ
http://link.aps.org/doi/10.1103/PhysRevB.65.085314Verlag
Klassifikation
NotationArt
71.35.Cc, 71.36.+c, 72.15.Lh, 78.47.+pPACS
Stichwörter / KeywordsADDITIONAL BOUNDARY-CONDITIONS; OF-MASS QUANTIZATION; QUANTUM-WELLS; PHONON SCATTERING; VALENCE-BAND; POLARITON; INTERFERENCE; CRYSTALS; LUMINESCENCE; PROPAGATION;
Dewey-Dezimal-Klassifikation500 Naturwissenschaften und Mathematik > 530 Physik
StatusVeröffentlicht
BegutachtetUnbekannt / Keine Angabe
An der Universität Regensburg entstandenUnbekannt / Keine Angabe
Dokumenten-ID11195

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