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Betz, M. ; Göger, G. ; Leitenstorfer, A. ; Bichler, Max ; Wegscheider, Werner ; Abstreiter, Gerhard

Nonlinear optical response of highly energetic excitons in GaAs: Microscopic electrodynamics at semiconductor interfaces

Betz, M., Göger, G., Leitenstorfer, A., Bichler, Max, Wegscheider, Werner and Abstreiter, Gerhard (2002) Nonlinear optical response of highly energetic excitons in GaAs: Microscopic electrodynamics at semiconductor interfaces. Physical Review B 65 (8), 085314.

Date of publication of this fulltext: 30 Nov 2009 14:13
Article
DOI to cite this document: 10.5283/epub.11195


Abstract

A spectroscopic investigation of bound electron-hole pairs in GaAs propagating with large center-of-mass momentum is presented. The approach is based on transmission experiments exploiting the coupling of excitonic polarization to the electromagnetic field of femtosecond laser pulses. The dispersion relations of the coherent excitations are determined up to excess energies of 300 meV above the ...

A spectroscopic investigation of bound electron-hole pairs in GaAs propagating with large center-of-mass momentum is presented. The approach is based on transmission experiments exploiting the coupling of excitonic polarization to the electromagnetic field of femtosecond laser pulses. The dispersion relations of the coherent excitations are determined up to excess energies of 300 meV above the band edge. A surprisingly low Frohlich coupling of light-hole excitons is observed in excellent agreement with theoretical simulations. The influence of different phonon scattering processes on the excitonic damping is discussed. The interaction dynamics of excitonic wave packets with nonthermal carrier distributions is analyzed with femtosecond time resolution. A theoretical model based on the exciton-polariton concept including additional boundary conditions reproduces our experimental results. The observations. in extremely thin samples show deviations from our phenomenological model, This finding is important for a detailed understanding of the microscopic polarizability near semiconductor surfaces.



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Details

Item typeArticle
Journal or Publication TitlePhysical Review B
Publisher:AMER PHYSICAL SOC
Place of Publication:COLLEGE PK
Volume:65
Number of Issue or Book Chapter:8
Page Range:085314
Date6 February 2002
InstitutionsPhysics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number
ValueType
10.1103/PhysRevB.65.085314DOI
Related URLs
URLURL Type
http://link.aps.org/doi/10.1103/PhysRevB.65.085314Publisher
Classification
NotationType
71.35.Cc, 71.36.+c, 72.15.Lh, 78.47.+pPACS
KeywordsADDITIONAL BOUNDARY-CONDITIONS; OF-MASS QUANTIZATION; QUANTUM-WELLS; PHONON SCATTERING; VALENCE-BAND; POLARITON; INTERFERENCE; CRYSTALS; LUMINESCENCE; PROPAGATION;
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedUnknown
Created at the University of RegensburgUnknown
Item ID11195

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