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Midinfrared intersubband electroluminescence of Si/SiGe quantum cascade structures

DOI to cite this document:
10.5283/epub.11298
Bormann, I. ; Brunner, K. ; Hackenbuchner, S. ; Zandler, G. ; Abstreiter, Gerhard ; Schmult, Stefan ; Wegscheider, Werner
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Date of publication of this fulltext: 07 Dec 2009 13:01


Abstract

Unipolar intersubband lasers like quantum cascade laser structures might be realized not only in III–V semiconductors but also in Si/SiGe multiple layer structures since no optical transitions across the indirect band gap are involved. We report on well-defined intersubband electroluminescence emission of Si/SiGe quantum cascade structures with different active quantum wells parameters. The ...

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