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Deutschmann, R. A. ; Wegscheider, Werner ; Rother, Martin ; Bichler, Max ; Abstreiter, Gerhard

Miniband transport in vertical superlattice field effect transistors

Deutschmann, R. A., Wegscheider, Werner, Rother, Martin, Bichler, Max and Abstreiter, Gerhard (2002) Miniband transport in vertical superlattice field effect transistors. Physica E Low-dimensional Systems and Nanostructures 12 (1-4), pp. 281-284.

Date of publication of this fulltext: 07 Dec 2009 13:02
Article
DOI to cite this document: 10.5283/epub.11299


Abstract

The non-equilibrium transport of electrons confined at an atomically sharp interface and subject to a periodic potential is studied. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data is qualitatively consistent with the Esaki–Tsu transport model. We emphasize the significance of the two-dimensionality of the ...

The non-equilibrium transport of electrons confined at an atomically sharp interface and subject to a periodic potential is studied. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data is qualitatively consistent with the Esaki–Tsu transport model. We emphasize the significance of the two-dimensionality of the electron system and the gate to inhibit domain formation. Additional features in the source–drain current are attributed to Bloch-phonon resonances.



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Details

Item typeArticle
Journal or Publication TitlePhysica E Low-dimensional Systems and Nanostructures
Publisher:Elsevier
Volume:12
Number of Issue or Book Chapter:1-4
Page Range:pp. 281-284
DateJanuary 2002
InstitutionsPhysics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number
ValueType
10.1016/S1386-9477(01)00373-3DOI
Related URLs
URLURL Type
http://link.aip.org/link/?APPLAB/80/2260/1Publisher
Classification
NotationType
73.21.Cd; 73.63.HsPACS
KeywordsLateral superlattice; Field effect transistor; Negative differential resistance
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedUnknown
Created at the University of RegensburgUnknown
Item ID11299

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