Fuhrer, A., Dorn, A., Lüscher, S., Heinzel, Thomas, Ensslin, Klaus, Wegscheider, Werner and Bichler, Max (2002) Invited Review Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation. Superlattices and Microstructures 31 (1), pp. 19-42.
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Abstract
Semiconductor nanostructures are fabricated by local oxidation of Ga[Al]As heterostructures with an atomic force microscope (AFM). The GaAs surface is locally oxidized by applying a bias between the substrate and a conductive AFM tip in a humidity-controlled environment. For high-quality two-dimensional electron gases (2DEGS) located close enough to the sample surface the electrons get depleted ...
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| Item type: | Article | ||||
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| Date: | January 2002 | ||||
| Institutions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider | ||||
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| Classification: |
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| Keywords: | atomic force lithography, semiconductor nanostructures, 2DEG | ||||
| Dewey Decimal Classification: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Unknown | ||||
| Created at the University of Regensburg: | Unknown | ||||
| Item ID: | 11311 |
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