Invited Review Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation

Fuhrer, A. ; Dorn, A. ; Lüscher, S. ; Heinzel, Thomas ; Ensslin, Klaus ; Wegscheider, Werner ; Bichler, Max

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Date of publication of this fulltext: 07 Dec 2009 13:18

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Details

Item type:	Article
Journal or Publication Title:	Superlattices and Microstructures
Publisher:	Elsevier
Volume:	31
Number of Issue or Book Chapter:	1
Page Range:	pp. 19-42
Date:	January 2002
Institutions:	Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:	Value Type 10.1006/spmi.2002.1015 DOI
Classification:	Notation Type 71.30.+h, 71.35.-y, 73.21.-b, 78.66.Fd PACS
Keywords:	atomic force lithography, semiconductor nanostructures, 2DEG
Dewey Decimal Classification:	500 Science > 530 Physics
Status:	Published
Refereed:	Unknown
Created at the University of Regensburg:	Unknown
Item ID:	11311

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Abstract

Semiconductor nanostructures are fabricated by local oxidation of Ga[Al]As heterostructures with an atomic force microscope (AFM). The GaAs surface is locally oxidized by applying a bias between the substrate and a conductive AFM tip in a humidity-controlled environment. For high-quality two-dimensional electron gases (2DEGS) located close enough to the sample surface the electrons get depleted ...

Abstract

Semiconductor nanostructures are fabricated by local oxidation of Ga[Al]As heterostructures with an atomic force microscope (AFM). The GaAs surface is locally oxidized by applying a bias between the substrate and a conductive AFM tip in a humidity-controlled environment. For high-quality two-dimensional electron gases (2DEGS) located close enough to the sample surface the electrons get depleted below the oxidized regions. This way the plane of a 2DEG can be cut into various conductive areas which are laterally insulated from each other. The realization of several high-quality semiconductor nanostructures is demonstrated. I. Quantum wires are fabricated with smooth and steep potential. II. Quantum dots tuned by in-plane gate electrodes can be operated in the regime, where electrons tunnel sequentially through individual quantum levels. III. Antidot superlattices with high-precision lattice parameters display characteristic features of classical and quantum transport.

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Metadata last modified: 03 Jun 2018 22:55

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