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Invited Review Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation

Fuhrer, A., Dorn, A., Lüscher, S., Heinzel, Thomas, Ensslin, Klaus, Wegscheider, Werner and Bichler, Max (2002) Invited Review Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation. Superlattices and Microstructures 31 (1), pp. 19-42.

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Abstract

Semiconductor nanostructures are fabricated by local oxidation of Ga[Al]As heterostructures with an atomic force microscope (AFM). The GaAs surface is locally oxidized by applying a bias between the substrate and a conductive AFM tip in a humidity-controlled environment. For high-quality two-dimensional electron gases (2DEGS) located close enough to the sample surface the electrons get depleted ...

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Item type:Article
Date:January 2002
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1006/spmi.2002.1015DOI
Classification:
NotationType
71.30.+h, 71.35.-y, 73.21.-b, 78.66.FdPACS
Keywords:atomic force lithography, semiconductor nanostructures, 2DEG
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:11311
Owner only: item control page

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