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- DOI to cite this document:
- 10.5283/epub.11312
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Abstract
Semiconductor nanostructures are realized by patterning AlGaAs/GaAs heterostructures with an atomic force microscope. Steep potential walls, precise pattern transfer and a combination of in-plane and top gates can be achieved with this technique. The electronic properties of nanostructures defined in this way are discussed on two examples, namely a quantum point contact and a single electron ...

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