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Vertical field effect transistors realized by cleaved-edge overgrowth

Ertl, F., Asperger, T., Deutschmann, R. A., Wegscheider, Werner, Bichler, Max, Böhm, G. and Abstreiter, Gerhard (2002) Vertical field effect transistors realized by cleaved-edge overgrowth. Physica E Low-dimensional Systems and Nanostructures 13 (2-4), pp. 920-924.

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We present a brief survey of vertical transistor devices fabricated by the cleaved-edge overgrowth technique. Different device types are realized using different transistor substrates grown by molecular beam epitaxy. These substrates mainly vary in the layer sequence and thickness between the source/drain contacts. Common to all designs is the vertical gate structure overgrown on a cleavage plane ...


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Item type:Article
Date:March 2002
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
81.16.−c; 85.35.−p; 73.63.−bPACS
Keywords:Cleaved-edge overgrowth; Vertical transistor; DC transport
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:11324
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