Ertl, F., Asperger, T., Deutschmann, R. A., Wegscheider, Werner, Bichler, Max, Böhm, G. und Abstreiter, Gerhard
Vertical field effect transistors realized by cleaved-edge overgrowth.
Physica E Low-dimensional Systems and Nanostructures 13 (2-4), S. 920-924.
Zum Artikel beim Verlag (über DOI)
We present a brief survey of vertical transistor devices fabricated by the cleaved-edge overgrowth technique. Different device types are realized using different transistor substrates grown by molecular beam epitaxy. These substrates mainly vary in the layer sequence and thickness between the source/drain contacts. Common to all designs is the vertical gate structure overgrown on a cleavage plane ...
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