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- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.11324
Alternative Links zum Volltext:DOI
Zusammenfassung
We present a brief survey of vertical transistor devices fabricated by the cleaved-edge overgrowth technique. Different device types are realized using different transistor substrates grown by molecular beam epitaxy. These substrates mainly vary in the layer sequence and thickness between the source/drain contacts. Common to all designs is the vertical gate structure overgrown on a cleavage plane ...
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