Go to content
UR Home

Vertical field effect transistors realized by cleaved-edge overgrowth

DOI to cite this document:
Ertl, F. ; Asperger, T. ; Deutschmann, R. A. ; Wegscheider, Werner ; Bichler, Max ; Böhm, G. ; Abstreiter, Gerhard
(172kB) - Repository staff only
Date of publication of this fulltext: 07 Dec 2009 13:29


We present a brief survey of vertical transistor devices fabricated by the cleaved-edge overgrowth technique. Different device types are realized using different transistor substrates grown by molecular beam epitaxy. These substrates mainly vary in the layer sequence and thickness between the source/drain contacts. Common to all designs is the vertical gate structure overgrown on a cleavage plane ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons