Go to content
UR Home

Vertical field effect transistors realized by cleaved-edge overgrowth

Ertl, F., Asperger, T., Deutschmann, R. A., Wegscheider, Werner, Bichler, Max, Böhm, G. and Abstreiter, Gerhard (2002) Vertical field effect transistors realized by cleaved-edge overgrowth. Physica E Low-dimensional Systems and Nanostructures 13 (2-4), pp. 920-924.

[img]PDF
Download (172kB) - Repository staff only
Date of publication of this fulltext: 07 Dec 2009 13:29

at publisher (via DOI)


Abstract

We present a brief survey of vertical transistor devices fabricated by the cleaved-edge overgrowth technique. Different device types are realized using different transistor substrates grown by molecular beam epitaxy. These substrates mainly vary in the layer sequence and thickness between the source/drain contacts. Common to all designs is the vertical gate structure overgrown on a cleavage plane ...

plus


Export bibliographical data



Item type:Article
Date:March 2002
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/S1386-9477(02)00235-7DOI
Classification:
NotationType
81.16.−c; 85.35.−p; 73.63.−bPACS
Keywords:Cleaved-edge overgrowth; Vertical transistor; DC transport
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:11324
Owner only: item control page

Downloads

Downloads per month over past year

  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons