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- DOI to cite this document:
- 10.5283/epub.11478
Abstract
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs) heterosystem whose emission properties are controlled by an additional electric field perpendicular to the transport direction. In our case, the additional field is established by remote delta-silicon doping, which is also responsible for charge carrier supply. The field originating from the ...
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