Abstract
Time-dependent capacitance measurements reveal an unstable phase of electrons in gallium arsenide quantum well that occurs when two Landau levels with opposite-spin are brought close to degeneracy by applying a gate voltage. This phase emerges below a critical temperature and displays a peculiar non-equilibrium dynamical evolution. The relaxation dynamics is found to follow a ...
Abstract
Time-dependent capacitance measurements reveal an unstable phase of electrons in gallium arsenide quantum well that occurs when two Landau levels with opposite-spin are brought close to degeneracy by applying a gate voltage. This phase emerges below a critical temperature and displays a peculiar non-equilibrium dynamical evolution. The relaxation dynamics is found to follow a stretched-exponential behaviour and correlates with hysteresis loops observed by sweeping the magnetic field. These experiments indicate that metastable randomly distributed magnetic domains with peculiar excitations are involved in the relaxation process in a way that is equivalently tunable by a change in gate voltage or temperature.
Altmetric