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Spin-dependent tunnelling through epitaxial GaAs(001) and (110) barriers

Zenger, Marcus ; Moser, Jürgen ; Kreuzer, Stephan ; Wegscheider, Werner ; Weiss, Dieter
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Date of publication of this fulltext: 11 Jan 2010 13:23


Abstract

We investigate transport through 5–10 nm thin epitaxial GaAs(001) and (110) barriers sandwiched between polycrystalline iron films. It turns out that tunnelling is the dominant transport mechanism; this is indicated by a nonlinear I–V-characteristic, an exponential dependence of the tunnelling current on the barrier thickness and the temperature dependence of the current. We observe a pronounced ...

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