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Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates

Gmeinwieser, Nikolaus, Engl, Karl, Schwarz, Ulrich, Zweck, Josef, Wegscheider, Werner, Miller, Stephan, Leber, Andreas, Weimar, Andreas, Lell, Alfred and Härle, Volker (2004) Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates. physica status solidi a 201 (12), pp. 2760-2763.

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Abstract

We investigate the epitaxial lateral overgrowth (ELOG) process on silicon carbide (SiC) to obtain defect reduced gallium nitride (GaN). The large wing tilt of about 4 degrees causes bunches of edge dislocations above the edge of the ELOG mask. The PL signal of these regions is diminished and broadened and a defect correlated emission line at about 3.4 eV is detected here exclusively. The GaN ...

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Item type:Article
Date:2 September 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1002/pssa.200404998DOI
Classification:
NotationType
61.72.Ff; 68.35.Gy; 68.55.Jk; 78.55.Cr; 81.15.GhPACS
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:11953
Owner only: item control page

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