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Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates

DOI to cite this document:
Gmeinwieser, Nikolaus ; Engl, Karl ; Schwarz, Ulrich ; Zweck, Josef ; Wegscheider, Werner ; Miller, Stephan ; Leber, Andreas ; Weimar, Andreas ; Lell, Alfred ; Härle, Volker
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Date of publication of this fulltext: 11 Jan 2010 13:30


We investigate the epitaxial lateral overgrowth (ELOG) process on silicon carbide (SiC) to obtain defect reduced gallium nitride (GaN). The large wing tilt of about 4 degrees causes bunches of edge dislocations above the edge of the ELOG mask. The PL signal of these regions is diminished and broadened and a defect correlated emission line at about 3.4 eV is detected here exclusively. The GaN ...


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