Go to content
UR Home

Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates

Gmeinwieser, Nikolaus, Engl, Karl, Schwarz, Ulrich, Zweck, Josef, Wegscheider, Werner, Miller, Stephan, Leber, Andreas, Weimar, Andreas, Lell, Alfred and Härle, Volker (2004) Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates. physica status solidi a 201 (12), pp. 2760-2763.

Download (126kB) - Repository staff only
Date of publication of this fulltext: 11 Jan 2010 13:30

at publisher (via DOI)


We investigate the epitaxial lateral overgrowth (ELOG) process on silicon carbide (SiC) to obtain defect reduced gallium nitride (GaN). The large wing tilt of about 4 degrees causes bunches of edge dislocations above the edge of the ELOG mask. The PL signal of these regions is diminished and broadened and a defect correlated emission line at about 3.4 eV is detected here exclusively. The GaN ...


Export bibliographical data

Item type:Article
Date:2 September 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
61.72.Ff; 68.35.Gy; 68.55.Jk; 78.55.Cr; 81.15.GhPACS
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:11953
Owner only: item control page


Downloads per month over past year

  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons