Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga1−xMnxAs alloys

DOI to cite this document:: 10.5283/epub.12489

Michel, C. ; Baranovskii, S. D ; Thomas, P. ; Heimbrodt, W. ; Elm, M. T. ; Klar, P. J. ; Goldlücke, B. ; Wurstbauer, Ursula ; Reinwald, Matthias ; Wegscheider, Werner

PDF
(190kB) - Repository staff only

Date of publication of this fulltext: 25 Jan 2010 13:51

Alternative links to fulltext:DOI

Details

Export bibliographical data

Abstract

We study the changes of magnetoresistance induced by controlled thermal annealing at temperatures ranging from 300 to 600 °C of a Ga0.98Mn0.02As alloy grown by low-temperature molecular beam epitaxy. We use a resistor-network model for describing the electrical transport as a function of temperature and external magnetic field. The model is founded on classical semiconductor band transport and ...