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Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga1−xMnxAs alloys

Michel, C., Baranovskii, S. D, Thomas, P., Heimbrodt, W, Elm, M. T., Klar, P. J., Goldlücke, B., Wurstbauer, Ursula, Reinwald, Matthias and Wegscheider, Werner (2007) Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga1−xMnxAs alloys. Journal of Applied Physics 102 (7), 073712.

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Abstract

We study the changes of magnetoresistance induced by controlled thermal annealing at temperatures ranging from 300 to 600 °C of a Ga0.98Mn0.02As alloy grown by low-temperature molecular beam epitaxy. We use a resistor-network model for describing the electrical transport as a function of temperature and external magnetic field. The model is founded on classical semiconductor band transport and ...

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Item type:Article
Date:11 October 2007
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.2786556DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?JAPIAU/102/073712/1Publisher
Classification:
NotationType
72.20.My; 72.80.Ey; 75.50.Pp; 75.20.CkPACS
Keywords:annealing, electronic density of states, gallium arsenide, gallium compounds, III-V semiconductors, magnetoresistance, manganese compounds, paramagnetic materials, semimagnetic semiconductors, Zeeman effect
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:12489
Owner only: item control page

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