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Cryogenic amplifier for fast real-time detection of single-electron tunneling

DOI to cite this document:
Vink, I. T. ; Nooitgedagt, T. ; Schouten, R. N. ; Vandersypen, L. M. K. ; Wegscheider, Werner
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Date of publication of this fulltext: 25 Jan 2010 13:58


The authors employ a cryogenic high electron mobility transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1 K and the circuit has a bandwidth of 1 MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than that of the QPC shot noise. The authors use this ...


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