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Abstract
We investigated two-dimensional electron- (2DES) and hole systems (2DHS) in the fractional quantum Hall regime for filling factors ν=1/3 and ν=2/3. Due to a metallic top gate we are able to vary the electron-/hole density of the samples over a wide range. Measuring activated transport on these systems with perpendicular magnetic fields up to 18 T and temperatures down to about 30 mK allows to get ...
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