Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization

DOI to cite this document:: 10.5283/epub.12742

Klappenberger, Florian

; Renk, Karl Friedrich ; Summer, Raimund Franz ; Keldysh, Leonid ; Rieder, Bernhard ; Wegscheider, Werner

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Date of publication of this fulltext: 08 Feb 2010 13:21

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Abstract

We report on a reversible avalanche breakdown due to free-carrier multiplication caused by cross band gap impact ionization in a GaAs microcrystal. The n GaAs microcrystal (length 1 mum, diameter 1 mum) was embedded between n(+) GaAs layers serving as electric contacts. We guided an electric pulse to the sample and determined, from the reflected and transmitted pulse, the I(V) characteristic. The ...