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Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

DOI to cite this document:
Schwarz, Ulrich ; Sturm, Evi ; Wegscheider, Werner ; Kümmler, V. ; Lell, Alfred ; Härle, Volker
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Date of publication of this fulltext: 08 Feb 2010 13:42


Adapting the Hakki Paoli method to group III nitrides, we measure gain, differential gain, carrier-induced change of refractive index, carrier-induced phase shift, and the antiguiding factor. Our measurements also cover the low-carrier-density regime, in which spontaneous and piezoelectric fields and Coulomb interaction are only partially screened. This regime is most interesting as a comparison with existing theoretical simulations, including many-body effects.

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