Schwarz, Ulrich, Sturm, Evi, Wegscheider, Werner, Kümmler, V., Lell, Alfred und Härle, Volker
Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers.
Applied Physics Letters 83 (20), S. 4095.
Zum Artikel beim Verlag (über DOI)
Adapting the Hakki Paoli method to group III nitrides, we measure gain, differential gain, carrier-induced change of refractive index, carrier-induced phase shift, and the antiguiding factor. Our measurements also cover the low-carrier-density regime, in which spontaneous and piezoelectric fields and Coulomb interaction are only partially screened. This regime is most interesting as a comparison with existing theoretical simulations, including many-body effects.
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