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Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

Schwarz, Ulrich, Sturm, Evi, Wegscheider, Werner, Kümmler, V., Lell, Alfred and Härle, Volker (2003) Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers. Applied Physics Letters 83 (20), p. 4095.

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Abstract

Adapting the Hakki Paoli method to group III nitrides, we measure gain, differential gain, carrier-induced change of refractive index, carrier-induced phase shift, and the antiguiding factor. Our measurements also cover the low-carrier-density regime, in which spontaneous and piezoelectric fields and Coulomb interaction are only partially screened. This regime is most interesting as a comparison with existing theoretical simulations, including many-body effects.


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Item type:Article
Date:17 November 2003
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1628825DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/83/4095/1Publisher
Classification:
NotationType
42.55.Px; 78.20.Ci; 85.35.Be; 78.67.DePACS
Keywords:refractive index, quantum well lasers, spectral line breadth, indium compounds, gallium compounds, III-V semiconductors, semiconductor quantum wells
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:12754
Owner only: item control page

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