Schwarz, Ulrich, Sturm, Evi, Wegscheider, Werner, Kümmler, V., Lell, Alfred und Härle, Volker
Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers.
Applied Physics Letters 83 (20), 4095 .
Zum Artikel beim Verlag (über DOI)
Adapting the Hakki Paoli method to group III nitrides, we measure gain, differential gain, carrier-induced change of refractive index, carrier-induced phase shift, and the antiguiding factor. Our measurements also cover the low-carrier-density regime, in which spontaneous and piezoelectric fields and Coulomb interaction are only partially screened. This regime is most interesting as a comparison with existing theoretical simulations, including many-body effects.
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