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Comparison of Growth and Strain Relaxation of Si/Ge Superlattices under Compressive and Tensile Strain Field
Wegscheider, Werner, Eberl, Karl, Abstreiter, Gerhard, Cerva, Hans and Oppolzer, Helmut (1991) Comparison of Growth and Strain Relaxation of Si/Ge Superlattices under Compressive and Tensile Strain Field. In: Bean, John Condon, (ed.) Silicon molecular beam epitaxy: symposium held April 29- May 3, 1991, Anaheim, California, USA. Materials Research Society symposium proceedings, 220. Materials Research Society, Pittsburgh, Pennsylvania, USA, p. 135. ISBN 1-558-99114-X.Date of publication of this fulltext: 02 Mar 2010 13:46
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| Item type | Book section |
| ISBN | 1-558-99114-X |
| Title of Book: | Silicon molecular beam epitaxy: symposium held April 29- May 3, 1991, Anaheim, California, USA |
|---|---|
| Publisher: | Materials Research Society |
| Place of Publication: | Pittsburgh, Pennsylvania, USA |
| Other Series: | Materials Research Society symposium proceedings |
| Volume: | 220 |
| Page Range: | p. 135 |
| Date | 1991 |
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Dewey Decimal Classification | 500 Science > 530 Physics |
| Status | Published |
| Refereed | Unknown |
| Created at the University of Regensburg | Unknown |
| Item ID | 13199 |
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