Manganese modulation-doped two-dimensional hole systems confined in strained InAs/InGaAs/InAlAs heterostructures were investigated by low-temperature magnetotransport experiments. The study demonstrates quantized transport phenomena in the high field region, weak anti-localization in the low-field region and ferromagnetic ordering in the separated and insulating manganese-doped layer. A significant amount of manganese in the channel of inverted modulation-doped structures causes a strong localization effect with hysteretic-like abrupt resistance changes over several orders of magnitude at very low temperatures.