From weak to strong localization in a ferromagnetic high mobility 2DHG

URN to cite this document:: urn:nbn:de:bvb:355-epub-136179
DOI to cite this document:: 10.5283/epub.13617

Wurstbauer, Ursula ; Schuh, Dieter ; Weiss, Dieter ; Wegscheider, Werner

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Date of publication of this fulltext: 19 Mar 2010 07:57

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Abstract

Manganese modulation-doped two-dimensional hole systems confined in strained InAs/InGaAs/InAlAs heterostructures were investigated by low-temperature magnetotransport experiments. The study demonstrates quantized transport phenomena in the high field region, weak anti-localization in the low-field region and ferromagnetic ordering in the separated and insulating manganese-doped layer. A ...