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Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs
Schmult, Stefan
, Gerl, Christian, Wurstbauer, Ursula , Mitzkus, C. and Wegscheider, Werner
(2005)
Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs.
Applied Physics Letters 86, p. 202105.
Date of publication of this fulltext: 05 Aug 2009 13:30
Article
DOI to cite this document: 10.5283/epub.1626
Abstract
Carbon-doped high-mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10(6) cm(2)/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction. (c) 2005 American Institute of Physics.
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Details
| Item type | Article | ||||||
| Journal or Publication Title | Applied Physics Letters | ||||||
| Publisher: | AMER INST PHYSICS | ||||||
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| Place of Publication: | MELVILLE | ||||||
| Volume: | 86 | ||||||
| Page Range: | p. 202105 | ||||||
| Date | May 2005 | ||||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider | ||||||
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| Keywords | QUANTUM-WELLS; HETEROSTRUCTURES; | ||||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||||
| Status | Published | ||||||
| Refereed | Yes, this version has been refereed | ||||||
| Created at the University of Regensburg | Yes | ||||||
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-16260 | ||||||
| Item ID | 1626 |
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