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Nonlinear far‐infrared photoacoustic magnetospectroscopy of n‐GaAs at low temperatures

URN to cite this document:
urn:nbn:de:bvb:355-epub-170533
DOI to cite this document:
10.5283/epub.17053
Schilz, A. ; Huber, L. ; Prettl, Wilhelm ; Kaminski, J.
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Date of publication of this fulltext: 11 Oct 2010 12:17


Abstract

The far‐infrared magnetoabsorption of shallow donors in n‐GaAs has been investigated as a function of irradiation intensity applying a low‐temperature photoacoustic cell. Optical cross sections and saturation intensities of various optical transitions were quantitatively determined yielding recombination times of excited electrons.


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