Cyclotron-Resonance-Induced Nonequilibrium Phase Transition in n-GaAs

URN to cite this document:: urn:nbn:de:bvb:355-epub-174900
DOI to cite this document:: 10.5283/epub.17490

Weispfenning, M. ; Hoeser, I. ; Böhm, W. ; Prettl, Wilhelm ; Schöll, E.

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Date of publication of this fulltext: 26 Oct 2010 12:08

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Abstract

A thresholdlike behavior of the far-infrared photoconductivity due to cyclotron resonance and a drastic deviation of the cyclotron-resonance line shape from a Lorentzian has been observed in n-GaAs at low temperatures by applying a high-power cw far-infrared laser. Both effects may consistently be explained in terms of generation-recombination-induced nonequilibrium phase transitions showing ...