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Cyclotron-Resonance-Induced Nonequilibrium Phase Transition in n-GaAs

URN to cite this document:
urn:nbn:de:bvb:355-epub-174900
Weispfenning, M. ; Hoeser, I. ; Böhm, W. ; Prettl, Wilhelm ; Schöll, E.
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Date of publication of this fulltext: 26 Oct 2010 12:08


Abstract

A thresholdlike behavior of the far-infrared photoconductivity due to cyclotron resonance and a drastic deviation of the cyclotron-resonance line shape from a Lorentzian has been observed in n-GaAs at low temperatures by applying a high-power cw far-infrared laser. Both effects may consistently be explained in terms of generation-recombination-induced nonequilibrium phase transitions showing ...

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