Negative FIR-photoconductivity in n-GaAs

URN to cite this document:: urn:nbn:de:bvb:355-epub-175134
DOI to cite this document:: 10.5283/epub.17513

Heisel, W. ; Böhm, W. ; Prettl, Wilhelm

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Date of publication of this fulltext: 26 Oct 2010 12:22

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Abstract

Negative photoconductivity in n-GaAs has been observed in the far infrared spectral range between 20 and 29 cm–1. Negative photoconductivity occurs when a magnetic field is applied to the samples and impact ionization of shallow donors by the electric bias field is the dominant mechanism of electron excitation to the conduction band. A conceivable model qualitatively explaining the experimental ...