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Negative FIR-photoconductivity in n-GaAs

Heisel, W., Böhm, W. and Prettl, Wilhelm (1981) Negative FIR-photoconductivity in n-GaAs. International Journal of Infrared and Millimeter Waves 2 (4), pp. 829-837.

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Abstract

Negative photoconductivity in n-GaAs has been observed in the far infrared spectral range between 20 and 29 cm–1. Negative photoconductivity occurs when a magnetic field is applied to the samples and impact ionization of shallow donors by the electric bias field is the dominant mechanism of electron excitation to the conduction band. A conceivable model qualitatively explaining the experimental ...

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Item type:Article
Date:1981
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1007/BF01007279DOI
Keywords:semiconductors - epitaxial GaAs - far-infrared magnetospectroscopy - impact inonization - photoconductivity
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:17513
Owner only: item control page

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